DMN4027SSD-13 Diodes Incorporated
auf Bestellung 7905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.94 EUR |
| 10+ | 1.22 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.57 EUR |
| 2500+ | 0.46 EUR |
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Technische Details DMN4027SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5.4A, Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V, Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote DMN4027SSD-13 nach Preis ab 0.58 EUR bis 1.97 EUR
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DMN4027SSD-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 40V 5.4A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 2206 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4027SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 5.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
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