DMN4030LK3-13 Diodes Incorporated
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.12 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 2500+ | 0.38 EUR |
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Technische Details DMN4030LK3-13 Diodes Incorporated
Description: MOSFET N-CH 40V 9.4A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, Power Dissipation (Max): 2.14W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V.
Weitere Produktangebote DMN4030LK3-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN4030LK3-13 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 40V 9.4A 3-Pin(2+Tab) DPAK T/R |
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DMN4030LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 9.4A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V |
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DMN4030LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 9.4A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V |
Produkt ist nicht verfügbar |
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| DMN4030LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.7A; Idm: 37.7A; 2.14W; TO252 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 12.9nC On-state resistance: 50mΩ Power dissipation: 2.14W Drain current: 7.7A Gate-source voltage: ±20V Pulsed drain current: 37.7A Drain-source voltage: 40V Kind of package: 13 inch reel; tape Case: TO252 Polarisation: unipolar |
Produkt ist nicht verfügbar |