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DMN4031SSD-13

DMN4031SSD-13 Diodes Incorporated

DMN4031SSD.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
16+1.11 EUR
19+0.95 EUR
100+0.71 EUR
500+0.56 EUR
1000+0.43 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN4031SSD-13 Diodes Incorporated

Description: MOSFET 2N-CH 40V 5.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.42W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5.2A, Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V, Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.

Weitere Produktangebote DMN4031SSD-13 nach Preis ab 0.28 EUR bis 1.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMN4031SSD-13 DMN4031SSD-13 Diodes Incorporated DMN4031SSD.pdf MOSFETs MOSFET BVDSS: 31V-40 SO-8,2.5K
auf Bestellung 9611 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.41 EUR
10+0.87 EUR
100+0.57 EUR
500+0.29 EUR
2500+0.28 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN4031SSD-13 DMN4031SSD-13 Diodes Incorporated DMN4031SSD.pdf Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 2497 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN4031SSD-13 DMN4031SSD.pdf
DMN4031SSD-13
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40 SO-8,2.5K
auf Bestellung 9611 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.41 EUR
10+0.87 EUR
100+0.57 EUR
500+0.29 EUR
2500+0.28 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN4031SSD-13 DMN4031SSD.pdf
DMN4031SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2497 Stücke
Im Einkaufswagen  Stück im Wert von  UAH