auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.72 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.28 EUR |
| 2500+ | 0.24 EUR |
| 10000+ | 0.23 EUR |
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Technische Details DMN4468LSS-13 Diodes Incorporated
Description: MOSFET N CH 30V 10A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V, Power Dissipation (Max): 1.52W (Ta), Vgs(th) (Max) @ Id: 1.95V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V.
Weitere Produktangebote DMN4468LSS-13 nach Preis ab 0.27 EUR bis 0.72 EUR
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DMN4468LSS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N CH 30V 10A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V Power Dissipation (Max): 1.52W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V |
auf Bestellung 1688 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4468LSS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 10A 8-Pin SOP T/R |
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DMN4468LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1.52W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 9A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 1.52W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
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DMN4468LSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V Power Dissipation (Max): 1.52W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V |
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DMN4468LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1.52W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 9A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 1.52W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |