Produkte > DIODES INCORPORATED > DMN52D0LT-7
DMN52D0LT-7

DMN52D0LT-7 Diodes Incorporated

DMN52D0LT.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 159000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.095 EUR
9000+ 0.079 EUR
30000+ 0.078 EUR
75000+ 0.07 EUR
150000+ 0.06 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN52D0LT-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V SOT523 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V.

Weitere Produktangebote DMN52D0LT-7 nach Preis ab 0.076 EUR bis 0.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN52D0LT-7 DMN52D0LT-7 Hersteller : Diodes Incorporated DMN52D0LT.pdf Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 161965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
43+ 0.42 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 29
DMN52D0LT-7 Hersteller : Diodes Incorporated DMN52D0LT-3103735.pdf MOSFET MOSFET BVDSS: 41V-60V SOT523 T&R 3K
auf Bestellung 5740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.62 EUR
10+ 0.43 EUR
100+ 0.27 EUR
1000+ 0.12 EUR
3000+ 0.1 EUR
9000+ 0.081 EUR
24000+ 0.076 EUR
Mindestbestellmenge: 5
DMN52D0LT-7 Hersteller : Diodes Zetex dmn52d0lt.pdf 50V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar