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DMN52D0UVQ-7 Diodes Zetex


DMN52D0UVQ.pdf Hersteller: Diodes Zetex
MOSFET BVDSS: 41V60V SOT563 T&R 3K
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Technische Details DMN52D0UVQ-7 Diodes Zetex

Description: MOSFET BVDSS: 41V~60V SOT563 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 480mW (Ta), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.

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DMN52D0UVQ-7 DMN52D0UVQ-7 Hersteller : Diodes Incorporated DMN52D0UVQ.pdf Description: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN52D0UVQ-7 Hersteller : Diodes Incorporated DMN52D0UVQ.pdf MOSFET MOSFET BVDSS: 41V-60V SOT563 T&R 3K
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