Produkte > DIODES ZETEX > DMN52D0UVTQ-13

DMN52D0UVTQ-13 Diodes Zetex


DMN52D0UVTQ.pdf Hersteller: Diodes Zetex
MOSFET BVDSS: 41V60V TSOT26 T&R 10K
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details DMN52D0UVTQ-13 Diodes Zetex

Description: MOSFET BVDSS: 41V~60V TSOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMN52D0UVTQ-13

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN52D0UVTQ-13 DMN52D0UVTQ-13 Hersteller : Diodes Incorporated DMN52D0UVTQ.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN52D0UVTQ-13 Hersteller : Diodes Incorporated DMN52D0UVTQ.pdf MOSFET MOSFET BVDSS: 41V-60V TSOT26 T&R 10K
Produkt ist nicht verfügbar