
DMN53D0LDWQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 530000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
10000+ | 0.15 EUR |
50000+ | 0.13 EUR |
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Technische Details DMN53D0LDWQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.46A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 400mW (Ta), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 460mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN53D0LDWQ-13 nach Preis ab 0.11 EUR bis 0.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN53D0LDWQ-13 | Hersteller : Diodes Zetex |
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auf Bestellung 510000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN53D0LDWQ-13 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMN53D0LDWQ-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |