DMN53D0LDWQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 267000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 75000+ | 0.13 EUR |
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Technische Details DMN53D0LDWQ-7 Diodes Incorporated
Description: DIODES INC. - DMN53D0LDWQ-7 - Dual-MOSFET, n-Kanal, 50 V, 50 V, 460 mA, 460 mA, 1 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 460mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 50V, MSL: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 460mA, Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm, Verlustleistung, p-Kanal: 400mW, Drain-Source-Spannung Vds, n-Kanal: 50V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 400mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote DMN53D0LDWQ-7 nach Preis ab 0.12 EUR bis 0.79 EUR
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DMN53D0LDWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.46A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 267000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN53D0LDWQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN53D0LDWQ-7 - Dual-MOSFET, n-Kanal, 50 V, 50 V, 460 mA, 460 mA, 1 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 460mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 50V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 460mA Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 50V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN53D0LDWQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN53D0LDWQ-7 - Dual-MOSFET, n-Kanal, 50 V, 50 V, 460 mA, 460 mA, 1 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 460mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 50V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 460mA Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 50V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN53D0LDWQ-7 | Hersteller : Diodes Zetex |
50V Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 |
auf Bestellung 267000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN53D0LDWQ-7 | Hersteller : Diodes Zetex |
50V Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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DMN53D0LDWQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.37A; Idm: 1A; 0.4W; SOT363 Mounting: SMD Features of semiconductor devices: ESD protected gate Case: SOT363 Power dissipation: 0.4W Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Drain-source voltage: 50V Drain current: 0.37A On-state resistance: 4.5Ω Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMN53D0LDWQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V SOT363 T&R 3K |
Produkt ist nicht verfügbar |
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DMN53D0LDWQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.37A; Idm: 1A; 0.4W; SOT363 Mounting: SMD Features of semiconductor devices: ESD protected gate Case: SOT363 Power dissipation: 0.4W Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Drain-source voltage: 50V Drain current: 0.37A On-state resistance: 4.5Ω Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |