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DMN6013LFG-7

DMN6013LFG-7 Diodes Incorporated

DMN6013LFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.43 EUR
4000+0.41 EUR
6000+0.4 EUR
10000+0.37 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN6013LFG-7 Diodes Incorporated

Description: MOSFET N-CH 60V 10.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V.

Weitere Produktangebote DMN6013LFG-7 nach Preis ab 0.43 EUR bis 1.5 EUR

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DMN6013LFG-7 DMN6013LFG-7 Hersteller : Diodes Incorporated DMN6013LFG.pdf Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
auf Bestellung 10605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
18+1.03 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DMN6013LFG-7 DMN6013LFG-7 Hersteller : Diodes Incorporated DMN6013LFG.pdf MOSFETs 60V N-Ch Enh FET 20Vgs 10.3A 2577pF
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.5 EUR
10+1.09 EUR
100+0.74 EUR
500+0.62 EUR
1000+0.53 EUR
2000+0.44 EUR
4000+0.43 EUR
Mindestbestellmenge: 2
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DMN6013LFG-7 DMN6013LFG-7 Hersteller : Diodes Inc dmn6013lfg.pdf Trans MOSFET N-CH 60V 10.3A 8-Pin PowerDI EP T/R
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