DMN6013LFGQ-7 Diodes Zetex
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.43 EUR |
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Technische Details DMN6013LFGQ-7 Diodes Zetex
Description: MOSFET N-CH 60V 10.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN6013LFGQ-7 nach Preis ab 0.46 EUR bis 2.13 EUR
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DMN6013LFGQ-7 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6013LFGQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6013LFGQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6013LFGQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 10.3A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6013LFGQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 10.3A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3950 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6013LFGQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 4533 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN6013LFGQ-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 10.3A Automotive 8-Pin PowerDI EP T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6013LFGQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMN6013LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.3A Pulsed drain current: 58.3A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 55.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMN6013LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.3A Pulsed drain current: 58.3A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 55.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |