DMN6013LFGQ-7 Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.49 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
2000 Stücke
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Technische Details DMN6013LFGQ-7 Diodes Zetex
Description: MOSFET N-CH 60V 10.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN6013LFGQ-7 nach Preis ab 0.52 EUR bis 1.89 EUR
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DMN6013LFGQ-7 | Diodes Zetex |
 Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6013LFGQ-7 | Diodes Zetex |
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6013LFGQ-7 | Diodes Zetex |
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6013LFGQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10.3A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6013LFGQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10.3A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 15950 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6013LFGQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 3928 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN6013LFGQ-7 | Diodes Zetex |
Trans MOSFET N-CH 60V 10.3A Automotive 8-Pin PowerDI EP T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMN6013LFGQ-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.52 EUR |
| DMN6013LFGQ-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.52 EUR |
| DMN6013LFGQ-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R
Trans MOSFET N-CH 60V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.52 EUR |
| DMN6013LFGQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.67 EUR |
| 6000+ | 0.63 EUR |
| 10000+ | 0.58 EUR |
| DMN6013LFGQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 15950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 14+ | 1.52 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.75 EUR |
| DMN6013LFGQ-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 3928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.89 EUR |
| 10+ | 1.45 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| 2000+ | 0.55 EUR |
| DMN6013LFGQ-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 10.3A Automotive 8-Pin PowerDI EP T/R
Trans MOSFET N-CH 60V 10.3A Automotive 8-Pin PowerDI EP T/R
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)