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DMN601DWKQ-7

DMN601DWKQ-7 Diodes Incorporated

DMN601DWKQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1044000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.094 EUR
21000+0.09 EUR
30000+0.086 EUR
75000+0.077 EUR
150000+0.075 EUR
Mindestbestellmenge: 3000
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Technische Details DMN601DWKQ-7 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.305A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 305mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

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DMN601DWKQ-7 DMN601DWKQ-7 Hersteller : Diodes Incorporated DMN601DWKQ.pdf MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 20818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.45 EUR
10+0.29 EUR
100+0.15 EUR
1000+0.13 EUR
3000+0.1 EUR
6000+0.092 EUR
Mindestbestellmenge: 7
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DMN601DWKQ-7 DMN601DWKQ-7 Hersteller : Diodes Incorporated DMN601DWKQ.pdf Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1048469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
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DMN601DWKQ-7 DMN601DWKQ-7 Hersteller : DIODES INCORPORATED DMN601DWKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Case: SOT363
Mounting: SMD
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 304pC
Power dissipation: 0.2W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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