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DMN601DWKQ-7

DMN601DWKQ-7 Diodes Incorporated


DMN601DWKQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
6000+ 0.16 EUR
9000+ 0.14 EUR
30000+ 0.13 EUR
Mindestbestellmenge: 3000
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Technische Details DMN601DWKQ-7 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.305A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 305mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMN601DWKQ-7 nach Preis ab 0.13 EUR bis 0.94 EUR

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DMN601DWKQ-7 DMN601DWKQ-7 Hersteller : Diodes Incorporated DMN601DWKQ.pdf Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 65080 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
41+ 0.64 EUR
100+ 0.33 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 28
DMN601DWKQ-7 DMN601DWKQ-7 Hersteller : Diodes Incorporated DIOD_S_A0004567126_1-2542754.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 74066 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.94 EUR
80+ 0.66 EUR
193+ 0.27 EUR
1000+ 0.2 EUR
3000+ 0.16 EUR
9000+ 0.14 EUR
24000+ 0.13 EUR
Mindestbestellmenge: 56
DMN601DWKQ-7 DMN601DWKQ-7 Hersteller : DIODES INCORPORATED DMN601DWKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Mounting: SMD
Gate charge: 304pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Case: SOT363
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance:
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN601DWKQ-7 DMN601DWKQ-7 Hersteller : DIODES INCORPORATED DMN601DWKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Mounting: SMD
Gate charge: 304pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Case: SOT363
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance:
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar