DMN601VK-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.098 EUR |
| 15000+ | 0.092 EUR |
| 21000+ | 0.088 EUR |
| 30000+ | 0.085 EUR |
| 75000+ | 0.077 EUR |
| 150000+ | 0.075 EUR |
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Technische Details DMN601VK-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT563, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 305mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 250mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN601VK-7 nach Preis ab 0.099 EUR bis 0.56 EUR
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DMN601VK-7 | Diodes Incorporated |
MOSFETs Dual N-Channel |
auf Bestellung 5617 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN601VK-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.305A SOT563 Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Current - Continuous Drain (Id) @ 25°C: 305mA Drain to Source Voltage (Vdss): 60V Power - Max: 250mW Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 382731 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN601VK-7 |
|
Hersteller: Diodes Incorporated
MOSFETs Dual N-Channel
MOSFETs Dual N-Channel
auf Bestellung 5617 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.56 EUR |
| 10+ | 0.34 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.11 EUR |
| 6000+ | 0.099 EUR |
| DMN601VK-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 0.305A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 382731 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |