Technische Details DMN601WKQ-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.8A, Power dissipation: 0.2W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 3Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN601WKQ-13
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DMN601WKQ-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.8A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN601WKQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V SOT323 |
Produkt ist nicht verfügbar |
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DMN601WKQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.8A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |