DMN6040SSDQ-13 Diodes Zetex
auf Bestellung 1727500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.28 EUR |
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Technische Details DMN6040SSDQ-13 Diodes Zetex
Description: MOSFET 2N-CH 60V 5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN6040SSDQ-13 nach Preis ab 0.28 EUR bis 1.55 EUR
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DMN6040SSDQ-13 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 5A Automotive AEC-Q101 8-Pin SO T/R |
auf Bestellung 1672500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6040SSDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 5A Automotive AEC-Q101 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6040SSDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 5A Automotive AEC-Q101 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6040SSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 377500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6040SSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 379920 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6040SSDQ-13 | Hersteller : Diodes Incorporated |
MOSFET 60V Dual N-Ch FET 40mOhm 10V 5.0A |
auf Bestellung 7240 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN6040SSDQ-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 5A Automotive 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMN6040SSDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 5A Automotive AEC-Q101 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMN6040SSDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 5A Automotive AEC-Q101 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMN6040SSDQ13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 0.8W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 30A Power dissipation: 0.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN6040SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 1.1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.3A Pulsed drain current: 30A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 22.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN6040SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 1.1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.3A Pulsed drain current: 30A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 22.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN6040SSDQ13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 0.8W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 30A Power dissipation: 0.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |