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DMN6066SSD-13

DMN6066SSD-13 Diodes Incorporated

DMN6066SSD.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.62 EUR
5000+0.59 EUR
12500+0.57 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN6066SSD-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 3.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V, Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.

Weitere Produktangebote DMN6066SSD-13 nach Preis ab 0.55 EUR bis 1.78 EUR

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DMN6066SSD-13 DMN6066SSD-13 Hersteller : Diodes Incorporated DMN6066SSD.pdf Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 24979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
14+1.31 EUR
100+1.02 EUR
500+0.84 EUR
1000+0.67 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DMN6066SSD-13 DMN6066SSD-13 Hersteller : Diodes Incorporated DIOD_S_A0000773325_1-2541972.pdf MOSFETs MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A
auf Bestellung 16016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.78 EUR
10+1.24 EUR
100+0.88 EUR
500+0.70 EUR
1000+0.64 EUR
2500+0.56 EUR
5000+0.55 EUR
Mindestbestellmenge: 2
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DMN6066SSD-13 DMN6066SSD-13 Hersteller : Diodes Inc 935dmn6066ssd.pdf Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
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DMN6066SSD-13 Hersteller : DIODES INCORPORATED DMN6066SSD.pdf DMN6066SSD-13 Multi channel transistors
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