DMN6066SSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.74 EUR |
| 5000+ | 0.7 EUR |
| 12500+ | 0.68 EUR |
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Technische Details DMN6066SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V, Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN6066SSD-13 nach Preis ab 0.8 EUR bis 1.74 EUR
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DMN6066SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.3A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 24979 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN6066SSD-13 | Diodes Zetex |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
|
| DMN6066SSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 3.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 24979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 14+ | 1.56 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.8 EUR |
| DMN6066SSD-13 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 1.63 EUR |
| 130+ | 1.3 EUR |
| 131+ | 1.24 EUR |