DMN6069SFG-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 3+ | 1.06 EUR |
| 10+ | 0.91 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.41 EUR |
| 3000+ | 0.34 EUR |
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Technische Details DMN6069SFG-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W, Polarisation: unipolar, Pulsed drain current: 25A, Drain current: 4.5A, Drain-source voltage: 60V, Gate-source voltage: ±20V, Gate charge: 25nC, On-state resistance: 63mΩ, Kind of package: 13 inch reel; tape, Power dissipation: 2.4W, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: PowerDI3333-8, Mounting: SMD.
Weitere Produktangebote DMN6069SFG-13
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DMN6069SFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 5.6A POWERDI333 |
Produkt ist nicht verfügbar |
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| DMN6069SFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W Polarisation: unipolar Pulsed drain current: 25A Drain current: 4.5A Drain-source voltage: 60V Gate-source voltage: ±20V Gate charge: 25nC On-state resistance: 63mΩ Kind of package: 13 inch reel; tape Power dissipation: 2.4W Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerDI3333-8 Mounting: SMD |
Produkt ist nicht verfügbar |
