Produkte > DIODES INCORPORATED > DMN6069SFGQ-13
DMN6069SFGQ-13

DMN6069SFGQ-13 Diodes Incorporated

DMN6069SFGQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 18A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.4W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.49 EUR
6000+0.45 EUR
15000+0.44 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN6069SFGQ-13 Diodes Incorporated

Description: MOSFET N-CH 60V 18A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V, Power Dissipation (Max): 2.4W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V.

Weitere Produktangebote DMN6069SFGQ-13 nach Preis ab 0.54 EUR bis 1.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN6069SFGQ-13 DMN6069SFGQ-13 Hersteller : Diodes Incorporated DMN6069SFGQ.pdf Description: MOSFET N-CH 60V 18A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.4W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
16+1.11 EUR
100+0.85 EUR
500+0.67 EUR
1000+0.54 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DMN6069SFGQ-13 DMN6069SFGQ-13 Hersteller : Diodes Incorporated DIOD_S_A0003108796_1-2542219.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.37 EUR
10+1.22 EUR
100+0.93 EUR
500+0.74 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMN6069SFGQ-13 Hersteller : DIODES INCORPORATED DMN6069SFGQ.pdf DMN6069SFGQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH