DMN6070SSDQ-13 Diodes Incorporated
auf Bestellung 4550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.8 EUR |
10+ | 0.68 EUR |
100+ | 0.51 EUR |
500+ | 0.4 EUR |
1000+ | 0.32 EUR |
2500+ | 0.27 EUR |
10000+ | 0.25 EUR |
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Technische Details DMN6070SSDQ-13 Diodes Incorporated
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.1A; Idm: 12A; 1.5W; SO8, Kind of package: reel; tape, Pulsed drain current: 12A, Power dissipation: 1.5W, Gate charge: 12.3nC, Polarisation: unipolar, Drain current: 2.1A, Kind of channel: enhanced, Drain-source voltage: 60V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±20V, Case: SO8, On-state resistance: 0.1Ω, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMN6070SSDQ-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMN6070SSDQ-13 | Hersteller : Diodes Inc | MOSFET BVDSS: 41V60V SO-8 T&R 2.5K |
Produkt ist nicht verfügbar |
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DMN6070SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.1A; Idm: 12A; 1.5W; SO8 Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 1.5W Gate charge: 12.3nC Polarisation: unipolar Drain current: 2.1A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: SO8 On-state resistance: 0.1Ω Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN6070SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.1A; Idm: 12A; 1.5W; SO8 Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 1.5W Gate charge: 12.3nC Polarisation: unipolar Drain current: 2.1A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: SO8 On-state resistance: 0.1Ω Mounting: SMD |
Produkt ist nicht verfügbar |