DMN60H080DS-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 80MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
| 15000+ | 0.1 EUR |
| 30000+ | 0.096 EUR |
| 75000+ | 0.094 EUR |
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Technische Details DMN60H080DS-7 Diodes Incorporated
Description: MOSFET N-CH 600V 80MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V, Current - Continuous Drain (Id) @ 25°C: 80mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN60H080DS-7 nach Preis ab 0.099 EUR bis 0.62 EUR
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DMN60H080DS-7 | Diodes Incorporated |
Description: MOSFET N-CH 600V 80MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80mA (Ta) Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V |
auf Bestellung 83459 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN60H080DS-7 | Diodes Incorporated |
MOSFET MOSFETBVDSS: 501V-650V |
auf Bestellung 25704 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN60H080DS-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
auf Bestellung 83459 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 56+ | 0.32 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| DMN60H080DS-7 |
|
Hersteller: Diodes Incorporated
MOSFET MOSFETBVDSS: 501V-650V
MOSFET MOSFETBVDSS: 501V-650V
auf Bestellung 25704 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.62 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.2 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.11 EUR |
| 9000+ | 0.1 EUR |
| 24000+ | 0.099 EUR |