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DMN60H080DS-7

DMN60H080DS-7 Diodes Incorporated

DMN60H080DS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
auf Bestellung 783000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.17 EUR
75000+ 0.14 EUR
Mindestbestellmenge: 3000
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Technische Details DMN60H080DS-7 Diodes Incorporated

Description: MOSFET N-CH 600V 80MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80mA (Ta), Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V.

Weitere Produktangebote DMN60H080DS-7 nach Preis ab 0.15 EUR bis 0.92 EUR

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DMN60H080DS-7 DMN60H080DS-7 Hersteller : Diodes Incorporated DMN60H080DS.pdf Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
auf Bestellung 786981 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.29 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 29
DMN60H080DS-7 DMN60H080DS-7 Hersteller : Diodes Incorporated DIOD_S_A0003383574_1-2542253.pdf MOSFET MOSFETBVDSS: 501V-650V
auf Bestellung 25704 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
57+0.92 EUR
94+ 0.56 EUR
179+ 0.29 EUR
1000+ 0.23 EUR
3000+ 0.17 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 57
DMN60H080DS-7 Hersteller : DIODES INCORPORATED DMN60H080DS.pdf DMN60H080DS-7 SMD N channel transistors
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