DMN61D8LQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Preis |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.23 EUR |
| 9000+ | 0.22 EUR |
| 15000+ | 0.21 EUR |
| 21000+ | 0.2 EUR |
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Technische Details DMN61D8LQ-7 Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 3V, 5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 390mW (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Current - Continuous Drain (Id) @ 25°C: 470mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote DMN61D8LQ-7 nach Preis ab 0.25 EUR bis 1.13 EUR
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DMN61D8LQ-7 | Diodes Incorporated |
MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW |
auf Bestellung 20490 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN61D8LQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 470MA SOT23 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 390mW (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 130961 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN61D8LQ-7 |
|
Hersteller: Diodes Incorporated
MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW
MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW
auf Bestellung 20490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.25 EUR |
| DMN61D8LQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 130961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |