auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN61D8LVT-13 Diodes Zetex
Description: MOSFET 2N-CH 60V 0.63A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 820mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 630mA, Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TSOT-26.
Weitere Produktangebote DMN61D8LVT-13 nach Preis ab 0.24 EUR bis 0.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN61D8LVT-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 0.63A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSOT-26 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DMN61D8LVT-13 | Hersteller : Diodes Incorporated |
MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA |
auf Bestellung 8770 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DMN61D8LVT-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.63A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSOT-26 |
auf Bestellung 19140 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DMN61D8LVT-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.63A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
DMN61D8LVT-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 0.63A Automotive 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
DMN61D8LVT-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 1.09W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 740pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
DMN61D8LVT-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 1.09W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 740pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |