DMN61D8LVT-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Polarisation: unipolar
Gate charge: 740pC
Power dissipation: 1.09W
Drain current: 0.5A
On-state resistance: 2.4Ω
Gate-source voltage: ±12V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Case: TSOT26
Kind of channel: enhancement
Type of transistor: N-MOSFET
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 126+ | 0.68 EUR |
| 161+ | 0.52 EUR |
| 213+ | 0.4 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
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Technische Details DMN61D8LVT-7 DIODES INCORPORATED
Description: MOSFET 2N-CH 60V 0.63A TSOT26, Vgs(th) (Max) @ Id: 2V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V, Current - Continuous Drain (Id) @ 25°C: 630mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 820mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TSOT-26.
Weitere Produktangebote DMN61D8LVT-7 nach Preis ab 0.31 EUR bis 1.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DMN61D8LVT-7 | Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 20Vgss TSOT26 |
auf Bestellung 3795 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN61D8LVT-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.63A TSOT26 Part Status: Active Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 2V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Current - Continuous Drain (Id) @ 25°C: 630mA Drain to Source Voltage (Vdss): 60V Power - Max: 820mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 2231 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN61D8LVT-7 |
|
Hersteller: Diodes Incorporated
MOSFET 60V N-Ch Enh FET 20Vgss TSOT26
MOSFET 60V N-Ch Enh FET 20Vgss TSOT26
auf Bestellung 3795 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.98 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.31 EUR |
| DMN61D8LVT-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 820mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 820mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 25+ | 0.87 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.38 EUR |