DMN61D8LVTQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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Technische Details DMN61D8LVTQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 820mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 630mA, Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TSOT-26, Part Status: Active.
Weitere Produktangebote DMN61D8LVTQ-7 nach Preis ab 0.21 EUR bis 0.97 EUR
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DMN61D8LVTQ-7 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 41 to 60V Low Rdson |
auf Bestellung 6323 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN61D8LVTQ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.63A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSOT-26 Part Status: Active |
auf Bestellung 6870 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN61D8LVTQ-7 |
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Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 41 to 60V Low Rdson
MOSFETs N-Ch Enh Mode FET 41 to 60V Low Rdson
auf Bestellung 6323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.22 EUR |
| 6000+ | 0.21 EUR |
| DMN61D8LVTQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 6870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |