Technische Details DMN61D9UDW-13 Diodes Inc
Description: MOSFET 2N-CH 60V 0.35A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 350mA, Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363.
Weitere Produktangebote DMN61D9UDW-13
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DMN61D9UDW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.35A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 |
Produkt ist nicht verfügbar |
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DMN61D9UDW-13 | Hersteller : Diodes Incorporated |
 MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A |
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