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DMN61D9UWQ-13

DMN61D9UWQ-13 Diodes Incorporated

DMN61D9UWQ_Rev2-3_Aug2022.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11020000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.085 EUR
30000+ 0.083 EUR
50000+ 0.069 EUR
Mindestbestellmenge: 10000
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Technische Details DMN61D9UWQ-13 Diodes Incorporated

Description: MOSFET N-CH 60V 400MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Power Dissipation (Max): 440mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

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DMN61D9UWQ-13 DMN61D9UWQ-13 Hersteller : Diodes Incorporated DMN61D9UWQ_Rev2-3_Aug2022.pdf Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11030706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
45+ 0.4 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.098 EUR
Mindestbestellmenge: 32
DMN61D9UWQ-13 Hersteller : Diodes Incorporated DIOD_S_A0004145053_1-2542512.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 40828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.58 EUR
10+ 0.43 EUR
100+ 0.24 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
2500+ 0.097 EUR
10000+ 0.076 EUR
Mindestbestellmenge: 5
DMN61D9UWQ-13 Hersteller : DIODES INCORPORATED DMN61D9UWQ_Rev2-3_Aug2022.pdf DMN61D9UWQ-13 SMD N channel transistors
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