DMN62D0LFD-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| 9000+ | 0.13 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details DMN62D0LFD-7 Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1212-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V.
Weitere Produktangebote DMN62D0LFD-7 nach Preis ab 0.062 EUR bis 0.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMN62D0LFD-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA 3DFNPackaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1212-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V |
auf Bestellung 54170 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0LFD-7 | Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss |
auf Bestellung 19456 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| DMN62D0LFD-7 | Diodes Zetex |
Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R |
auf Bestellung 183000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| DMN62D0LFD-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Description: MOSFET N-CH 60V 310MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
auf Bestellung 54170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 49+ | 0.44 EUR |
| 59+ | 0.36 EUR |
| 67+ | 0.31 EUR |
| 100+ | 0.27 EUR |
| DMN62D0LFD-7 |
![]() |
Hersteller: Diodes Incorporated
MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss
MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss
auf Bestellung 19456 Stücke:
Lieferzeit 10-14 Tag (e)
| DMN62D0LFD-7 |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R
Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R
auf Bestellung 183000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.062 EUR |


