DMN62D0LFD-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.082 EUR |
| 6000+ | 0.073 EUR |
| 9000+ | 0.069 EUR |
| 15000+ | 0.064 EUR |
| 21000+ | 0.061 EUR |
| 30000+ | 0.058 EUR |
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Technische Details DMN62D0LFD-7 Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Active, Supplier Device Package: X1-DFN1212-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 480mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN62D0LFD-7 nach Preis ab 0.12 EUR bis 0.55 EUR
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DMN62D0LFD-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Active Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 3-UDFN Packaging: Cut Tape (CT) Mounting Type: Surface Mount |
auf Bestellung 89237 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0LFD-7 | Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss |
auf Bestellung 19456 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMN62D0LFD-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Description: MOSFET N-CH 60V 310MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
auf Bestellung 89237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 55+ | 0.32 EUR |
| 67+ | 0.26 EUR |
| 100+ | 0.2 EUR |
| 250+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| DMN62D0LFD-7 |
|
Hersteller: Diodes Incorporated
MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss
MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss
auf Bestellung 19456 Stücke:
Lieferzeit 10-14 Tag (e)