Produkte > DIODES INCORPORATED > DMN62D0LFD-7
DMN62D0LFD-7

DMN62D0LFD-7 Diodes Incorporated

DMN62D0LFD.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.06 EUR
21000+0.06 EUR
30000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN62D0LFD-7 Diodes Incorporated

Description: MOSFET N-CH 60V 310MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1212-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V.

Weitere Produktangebote DMN62D0LFD-7 nach Preis ab 0.05 EUR bis 0.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN62D0LFD-7 DMN62D0LFD-7 Hersteller : Diodes Incorporated DMN62D0LFD.pdf Description: MOSFET N-CH 60V 310MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
auf Bestellung 89237 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
55+0.32 EUR
67+0.26 EUR
100+0.20 EUR
250+0.16 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0LFD-7 DMN62D0LFD-7 Hersteller : Diodes Incorporated DMN62D0LFD-271619.pdf MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss
auf Bestellung 19456 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0LFD-7 Hersteller : Diodes Zetex dmn62d0lfd.pdf Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R
auf Bestellung 183000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0LFD-7 Hersteller : Diodes Inc dmn62d0lfd.pdf Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH