DMN62D0SFD-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
| 15000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 75000+ | 0.093 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN62D0SFD-7 Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN, Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: X1-DFN1212-3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 430mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 540mA (Ta), FET Type: N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UDFN, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide).
Weitere Produktangebote DMN62D0SFD-7 nach Preis ab 0.095 EUR bis 0.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN62D0SFD-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 5091 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
DMN62D0SFD-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 540MA 3DFNFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 430mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) |
auf Bestellung 203071 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN62D0SFD-7 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
auf Bestellung 5091 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.1 EUR |
| 6000+ | 0.095 EUR |
| DMN62D0SFD-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Description: MOSFET N-CH 60V 540MA 3DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
auf Bestellung 203071 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 45+ | 0.4 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |


