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Technische Details DMN62D0SFD-7 Diodes Zetex
Description: DIODES INC. - DMN62D0SFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 540 mA, 2 ohm, X1-DFN1212, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 540mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.6V, euEccn: NLR, Verlustleistung: 430mW, Bauform - Transistor: X1-DFN1212, Anzahl der Pins: 3Pins, Produktpalette: PW Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 2ohm, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote DMN62D0SFD-7 nach Preis ab 0.11 EUR bis 1.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMN62D0SFD-7 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 540MA 3DFNInput Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 430mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) Technology: MOSFET (Metal Oxide) |
auf Bestellung 201000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0SFD-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 5091 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0SFD-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 540MA 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 430mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) |
auf Bestellung 203071 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0SFD-7 | DIODES INC. |
Description: DIODES INC. - DMN62D0SFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 540 mA, 2 ohm, X1-DFN1212, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 540mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 430mW Bauform - Transistor: X1-DFN1212 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN62D0SFD-7 | DIODES INC. |
Description: DIODES INC. - DMN62D0SFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 540 mA, 2 ohm, X1-DFN1212, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 540mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 430mW Bauform - Transistor: X1-DFN1212 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 60V 540MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
auf Bestellung 201000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| 15000+ | 0.13 EUR |
| 30000+ | 0.12 EUR |
| 75000+ | 0.11 EUR |
| DMN62D0SFD-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
auf Bestellung 5091 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.73 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| DMN62D0SFD-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Description: MOSFET N-CH 60V 540MA 3DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
auf Bestellung 203071 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 45+ | 0.48 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| DMN62D0SFD-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN62D0SFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 540 mA, 2 ohm, X1-DFN1212, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 540mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 430mW
Bauform - Transistor: X1-DFN1212
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (14-Jun-2023)
Description: DIODES INC. - DMN62D0SFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 540 mA, 2 ohm, X1-DFN1212, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 540mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 430mW
Bauform - Transistor: X1-DFN1212
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 196+ | 1.27 EUR |
| 286+ | 0.81 EUR |
| DMN62D0SFD-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN62D0SFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 540 mA, 2 ohm, X1-DFN1212, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 540mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 430mW
Bauform - Transistor: X1-DFN1212
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (14-Jun-2023)
Description: DIODES INC. - DMN62D0SFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 540 mA, 2 ohm, X1-DFN1212, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 540mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 430mW
Bauform - Transistor: X1-DFN1212
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 196+ | 1.27 EUR |
| 286+ | 0.81 EUR |