DMN62D0UDWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.22 EUR |
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Technische Details DMN62D0UDWQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMN62D0UDWQ-13 nach Preis ab 0.25 EUR bis 1.14 EUR
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DMN62D0UDWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.35A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 15788 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMN62D0UDWQ-13 | Hersteller : Diodes Inc |
MOSFET BVDSS: 41V60V SOT363 T&R 3K |
Produkt ist nicht verfügbar |
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| DMN62D0UDWQ-13 | Hersteller : Diodes Zetex |
Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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DMN62D0UDWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.41W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN62D0UDWQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V SOT363 T&R 10K |
Produkt ist nicht verfügbar |
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DMN62D0UDWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.41W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |