Produkte > DIODES INCORPORATED > DMN62D0UDWQ-13

DMN62D0UDWQ-13 Diodes Incorporated


DMN62D0UDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 260000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.15 EUR
50000+0.12 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN62D0UDWQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.35A SOT363, Part Status: Active, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 320mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

Weitere Produktangebote DMN62D0UDWQ-13 nach Preis ab 0.17 EUR bis 0.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMN62D0UDWQ-13 DMN62D0UDWQ-13 Diodes Incorporated DMN62D0UDWQ.pdf Description: MOSFET 2N-CH 60V 0.35A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 268288 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
33+0.55 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UDWQ-13 DMN62D0UDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 268288 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+0.77 EUR
33+0.55 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH