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DMN62D0UDWQ-13

DMN62D0UDWQ-13 Diodes Incorporated

DMN62D0UDWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 260000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.15 EUR
50000+0.12 EUR
Mindestbestellmenge: 10000
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Technische Details DMN62D0UDWQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.35A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

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DMN62D0UDWQ-13 DMN62D0UDWQ-13 Hersteller : Diodes Incorporated DMN62D0UDWQ.pdf Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 268288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.55 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UDWQ-13 Hersteller : Diodes Inc dmn62d0udwq.pdf MOSFET BVDSS: 41V60V SOT363 T&R 3K
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DMN62D0UDWQ-13 Hersteller : Diodes Zetex dmn62d0udwq.pdf Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101
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DMN62D0UDWQ-13 Hersteller : DIODES INCORPORATED DMN62D0UDWQ.pdf DMN62D0UDWQ-13 SMD N channel transistors
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DMN62D0UDWQ-13 Hersteller : Diodes Incorporated DIOD_S_A0010061903_1-2543376.pdf MOSFET MOSFET BVDSS: 41V-60V SOT363 T&R 10K
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