DMN62D0UV-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 0.49A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 470mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 9000+ | 0.10 EUR |
| 30000+ | 0.10 EUR |
| 75000+ | 0.08 EUR |
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Technische Details DMN62D0UV-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.49A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 470mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 490mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMN62D0UV-7 nach Preis ab 0.14 EUR bis 0.67 EUR
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DMN62D0UV-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.49A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 470mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 80689 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UV-7 | Hersteller : Diodes Zetex |
MOSFET BVDSS: 41V60V SOT563 T&R 3K |
Produkt ist nicht verfügbar |
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| DMN62D0UV-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V SOT563 T&R 3K |
Produkt ist nicht verfügbar |