| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.31 EUR |
| 1000+ | 0.26 EUR |
| 2500+ | 0.24 EUR |
| 10000+ | 0.21 EUR |
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Technische Details DMN63D1LT-13 Diodes Incorporated
Description: MOSFET N-CH 60V 320MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 330mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V.
Weitere Produktangebote DMN63D1LT-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DMN63D1LT-13 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 320MA SOT523Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
DMN63D1LT-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 320MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMN63D1LT-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN63D1LT-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH