auf Bestellung 1900000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.046 EUR |
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Technische Details DMN63D8LDW-13 Diodes Zetex
Description: MOSFET 2N-CH 30V 0.22A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 220mA, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V, Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote DMN63D8LDW-13 nach Preis ab 0.056 EUR bis 0.75 EUR
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DMN63D8LDW-13 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN63D8LDW-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN63D8LDW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.22A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 1900000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN63D8LDW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.22A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 1908326 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN63D8LDW-13 | Hersteller : Diodes Incorporated |
MOSFET 30V DUAL N-CH MOSFET |
auf Bestellung 504546 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN63D8LDW-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN63D8LDW-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.17A; Idm: 0.8A; 0.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.17A Pulsed drain current: 0.8A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN63D8LDW-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.17A; Idm: 0.8A; 0.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.17A Pulsed drain current: 0.8A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |