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DMN63D8LDW-7 Diodes Incorporated


DMN63D8LDW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.22A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 105000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.086 EUR
6000+0.077 EUR
9000+0.072 EUR
15000+0.067 EUR
21000+0.064 EUR
30000+0.061 EUR
75000+0.055 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details DMN63D8LDW-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 0.22A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 220mA, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V, Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363.

Weitere Produktangebote DMN63D8LDW-7 nach Preis ab 0.055 EUR bis 0.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMN63D8LDW-7 DMN63D8LDW-7 Diodes Incorporated DMN63D8LDW.pdf MOSFETs 30V DUAL N-CH MOSFET
auf Bestellung 168205 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.38 EUR
14+0.21 EUR
100+0.14 EUR
500+0.11 EUR
1000+0.099 EUR
3000+0.062 EUR
6000+0.055 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN63D8LDW-7 DMN63D8LDW-7 Diodes Incorporated DMN63D8LDW.pdf Description: MOSFET 2N-CH 30V 0.22A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 108432 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN63D8LDW-7 DMN63D8LDW.pdf
Hersteller: Diodes Incorporated
MOSFETs 30V DUAL N-CH MOSFET
auf Bestellung 168205 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+0.38 EUR
14+0.21 EUR
100+0.14 EUR
500+0.11 EUR
1000+0.099 EUR
3000+0.062 EUR
6000+0.055 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN63D8LDW-7 DMN63D8LDW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.22A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 108432 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH