DMN63D8LV-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.26A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 260mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-563
| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.091 EUR |
| 9000+ | 0.086 EUR |
| 15000+ | 0.08 EUR |
| 21000+ | 0.076 EUR |
| 30000+ | 0.073 EUR |
| 75000+ | 0.066 EUR |
| 150000+ | 0.062 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN63D8LV-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.26A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 450mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 260mA, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V, Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote DMN63D8LV-7 nach Preis ab 0.12 EUR bis 0.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN63D8LV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.26A Power dissipation: 0.45W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
DMN63D8LV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.26A SOT563 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Current - Continuous Drain (Id) @ 25°C: 260mA Drain to Source Voltage (Vdss): 30V Power - Max: 450mW |
auf Bestellung 2241572 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
DMN63D8LV-7 | Diodes Incorporated |
MOSFETs Dual N-Ch Enh Mode 30V 4.2Ohm 200mA |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN63D8LV-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 294+ | 0.24 EUR |
| DMN63D8LV-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.26A SOT563
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 260mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 450mW
Description: MOSFET 2N-CH 30V 0.26A SOT563
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 260mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 450mW
auf Bestellung 2241572 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 60+ | 0.3 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| DMN63D8LV-7 |
|
Hersteller: Diodes Incorporated
MOSFETs Dual N-Ch Enh Mode 30V 4.2Ohm 200mA
MOSFETs Dual N-Ch Enh Mode 30V 4.2Ohm 200mA
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |