DMN63D8LW-13 Diodes Incorporated

Description: MOSFET N-CH 30V 380MA SOT323, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 300mW (Ta), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V, Current - Continuous Drain (Id) @ 25°C: 380mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 30 V.