DMN65D8L-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.049 EUR |
| 6000+ | 0.044 EUR |
| 9000+ | 0.041 EUR |
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Technische Details DMN65D8L-7 Diodes Incorporated
Description: DIODES INC. - DMN65D8L-7 - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 3 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 310mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2V, euEccn: NLR, Verlustleistung: 370mW, Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 3ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote DMN65D8L-7 nach Preis ab 0.026 EUR bis 0.25 EUR
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DMN65D8L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.21A Power dissipation: 0.54W On-state resistance: 4Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
auf Bestellung 6382 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8L-7 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 60V 3ohm 310mA |
auf Bestellung 62374 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN65D8L-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V |
auf Bestellung 9894 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN65D8L-7 | DIODES INC. |
Description: DIODES INC. - DMN65D8L-7 - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 3 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 310mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 224427 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.21A
Power dissipation: 0.54W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.21A
Power dissipation: 0.54W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 6382 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 715+ | 0.1 EUR |
| 1055+ | 0.068 EUR |
| 1250+ | 0.057 EUR |
| 1799+ | 0.04 EUR |
| 2101+ | 0.034 EUR |
| 2294+ | 0.031 EUR |
| 3000+ | 0.028 EUR |
| DMN65D8L-7 |
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Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 60V 3ohm 310mA
MOSFETs N-Ch Enh Mode FET 60V 3ohm 310mA
auf Bestellung 62374 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 0.17 EUR |
| 23+ | 0.12 EUR |
| 100+ | 0.058 EUR |
| 3000+ | 0.039 EUR |
| 6000+ | 0.028 EUR |
| 9000+ | 0.026 EUR |
| DMN65D8L-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Description: MOSFET N-CH 60V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
auf Bestellung 9894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 114+ | 0.15 EUR |
| 186+ | 0.095 EUR |
| 500+ | 0.069 EUR |
| 1000+ | 0.06 EUR |
| DMN65D8L-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN65D8L-7 - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 3 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 310mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 370mW
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 3ohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMN65D8L-7 - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 3 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 310mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 370mW
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 3ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 224427 Stücke:
Lieferzeit 14-21 Tag (e)