DMN65D8LDW-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.18A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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Technische Details DMN65D8LDW-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.18A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 180mA, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V, Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote DMN65D8LDW-7 nach Preis ab 0.077 EUR bis 0.48 EUR
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DMN65D8LDW-7 | Diodes Incorporated |
MOSFETs Dual N-Ch 60V 8ohm 5V VGS 170mA |
auf Bestellung 5719 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN65D8LDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.18A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 4142 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN65D8LDW-7 |
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Hersteller: Diodes Incorporated
MOSFETs Dual N-Ch 60V 8ohm 5V VGS 170mA
MOSFETs Dual N-Ch 60V 8ohm 5V VGS 170mA
auf Bestellung 5719 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.48 EUR |
| 10+ | 0.34 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.092 EUR |
| 6000+ | 0.077 EUR |
| DMN65D8LDW-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.18A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 60V 0.18A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 4142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 61+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |