DMN65D8LFB-7B Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 15+ | 0.2 EUR |
| 20+ | 0.14 EUR |
| 100+ | 0.084 EUR |
| 500+ | 0.072 EUR |
| 1000+ | 0.065 EUR |
| 5000+ | 0.062 EUR |
| 10000+ | 0.055 EUR |
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Technische Details DMN65D8LFB-7B Diodes Incorporated
Description: MOSFET N-CH 60V 260MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V, Power Dissipation (Max): 430mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V.
Weitere Produktangebote DMN65D8LFB-7B nach Preis ab 0.074 EUR bis 0.39 EUR
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DMN65D8LFB-7B | Diodes Incorporated |
 Description: MOSFET N-CH 60V 260MA 3DFNPackaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V |
auf Bestellung 12911 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN65D8LFB-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 260MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
Description: MOSFET N-CH 60V 260MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
auf Bestellung 12911 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 74+ | 0.24 EUR |
| 119+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.097 EUR |
| 2000+ | 0.086 EUR |
| 5000+ | 0.074 EUR |