DMN65D8LQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 237000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.043 EUR |
| 6000+ | 0.041 EUR |
| 9000+ | 0.038 EUR |
| 15000+ | 0.037 EUR |
| 30000+ | 0.034 EUR |
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Technische Details DMN65D8LQ-7 Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V, Power Dissipation (Max): 370mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN65D8LQ-7 nach Preis ab 0.037 EUR bis 0.21 EUR
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DMN65D8LQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8LQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8LQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 88839 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN65D8LQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 240379 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN65D8LQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN65D8LQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 2 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 310mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8LQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN65D8LQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 2 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 310mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8LQ-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMN65D8LQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMN65D8LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 870pC Pulsed drain current: 0.8A Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN65D8LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 870pC Pulsed drain current: 0.8A Application: automotive industry |
Produkt ist nicht verfügbar |