auf Bestellung 4888 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN66D0LDW-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.115A SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V, Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote DMN66D0LDW-7 nach Preis ab 0.43 EUR bis 1.11 EUR
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DMN66D0LDW-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 0.115A SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN66D0LDW-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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DMN66D0LDW-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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DMN66D0LDW-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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DMN66D0LDW-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN66D0LDW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.115A SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |
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DMN66D0LDW-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |