DMN67D7L-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 570mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 10000+ | 0.055 EUR |
| 30000+ | 0.054 EUR |
| 50000+ | 0.049 EUR |
| 100000+ | 0.043 EUR |
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Technische Details DMN67D7L-13 Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23-3, Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±40V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 570mW (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 210mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V.
Weitere Produktangebote DMN67D7L-13 nach Preis ab 0.067 EUR bis 0.42 EUR
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DMN67D7L-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 210MA SOT23-3 Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±40V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 570mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V |
auf Bestellung 140000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN67D7L-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 570mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Description: MOSFET N-CH 60V 210MA SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 570mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 60+ | 0.29 EUR |
| 123+ | 0.14 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.083 EUR |
| 2000+ | 0.072 EUR |
| 5000+ | 0.067 EUR |