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Technische Details DMN67D8LDW-7 Diodes Zetex
Description: MOSFET 2N-CH 60V 0.23A SOT363, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V, Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 230mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 320mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN67D8LDW-7 nach Preis ab 0.086 EUR bis 0.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMN67D8LDW-7 | Diodes Zetex |
 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN67D8LDW-7 | Diodes Zetex |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN67D8LDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.23A SOT363 Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Current - Continuous Drain (Id) @ 25°C: 230mA Drain to Source Voltage (Vdss): 60V Power - Max: 320mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 1774 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN67D8LDW-7 |
|
Hersteller: Diodes Zetex
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| 9000+ | 0.086 EUR |
| DMN67D8LDW-7 |
|
Hersteller: Diodes Zetex
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.11 EUR |
| 9000+ | 0.092 EUR |
| DMN67D8LDW-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.23A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 230mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 0.23A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 230mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 1774 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 53+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |