DMN68M7SCT Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V TO220-3 T, Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 72.9 nC @ 10 V, Drain to Source Voltage (Vdss): 68 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.