Technische Details DMNH10H021SPSW-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.4W; PowerDI5060-8, Mounting: SMD, Polarisation: unipolar, Gate charge: 71nC, On-state resistance: 28mΩ, Power dissipation: 4.4W, Drain-source voltage: 100V, Case: PowerDI5060-8, Type of transistor: N-MOSFET.
Weitere Produktangebote DMNH10H021SPSW-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMNH10H021SPSW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.4W; PowerDI5060-8 Mounting: SMD Polarisation: unipolar Gate charge: 71nC On-state resistance: 28mΩ Power dissipation: 4.4W Drain-source voltage: 100V Case: PowerDI5060-8 Type of transistor: N-MOSFET |
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