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DMNH10H028SK3-13

DMNH10H028SK3-13 Diodes Incorporated

DMNH10H028SK3.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.91 EUR
5000+0.87 EUR
12500+0.85 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMNH10H028SK3-13 Diodes Incorporated

Description: MOSFET N-CH 100V 55A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V.

Weitere Produktangebote DMNH10H028SK3-13 nach Preis ab 0.89 EUR bis 3.26 EUR

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Preis
DMNH10H028SK3-13 DMNH10H028SK3-13 Hersteller : Diodes Incorporated DMNH10H028SK3-3214306.pdf MOSFETs N-Ch Enh Mode FET 100Vds 20Vgs 125W
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.29 EUR
10+1.88 EUR
100+1.46 EUR
500+1.24 EUR
1000+1.01 EUR
2500+0.90 EUR
5000+0.89 EUR
Mindestbestellmenge: 2
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DMNH10H028SK3-13 DMNH10H028SK3-13 Hersteller : Diodes Incorporated DMNH10H028SK3.pdf Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMNH10H028SK3-13 DMNH10H028SK3-13 Hersteller : Diodes Inc 1072dmnh10h028sk3.pdf Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) DPAK T/R
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DMNH10H028SK3-13 Hersteller : DIODES INCORPORATED DMNH10H028SK3.pdf DMNH10H028SK3-13 SMD N channel transistors
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