DMNH3010LK3-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.6A; Idm: 100A; 3.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.6A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMNH3010LK3-13 DIODES INCORPORATED
Description: MOSFET N-CH 30V 15A/55A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 55A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V.
Weitere Produktangebote DMNH3010LK3-13
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DMNH3010LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 15A/55A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMNH3010LK3-13 | Hersteller : Diodes Incorporated |
MOSFET 175c N-Ch Enh FET 30V 9.5mOhm 10V 55A |
Produkt ist nicht verfügbar |
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| DMNH3010LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10.6A; Idm: 100A; 3.2W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10.6A Power dissipation: 3.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 100A |
Produkt ist nicht verfügbar |