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DMNH6011LK3Q-13 Diodes Inc


dmnh6011lk3q.pdf Hersteller: Diodes Inc
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) DPAK T/R
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Technische Details DMNH6011LK3Q-13 Diodes Inc

Description: MOSFET N-CH 55V 80A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3077 pF @ 30 V.

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DMNH6011LK3Q-13 DMNH6011LK3Q-13 Hersteller : Diodes Incorporated DMNH6011LK3Q.pdf Description: MOSFET N-CH 55V 80A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3077 pF @ 30 V
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DMNH6011LK3Q-13 DMNH6011LK3Q-13 Hersteller : Diodes Incorporated DIOD_S_A0004887649_1-2542565.pdf MOSFET MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
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