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DMNH6012LK3Q-13

DMNH6012LK3Q-13 Diodes Incorporated

DMNH6012LK3Q.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 80A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 360000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.81 EUR
5000+0.79 EUR
Mindestbestellmenge: 2500
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Technische Details DMNH6012LK3Q-13 Diodes Incorporated

Description: MOSFET N-CH 60V 80A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote DMNH6012LK3Q-13 nach Preis ab 0.82 EUR bis 2.08 EUR

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DMNH6012LK3Q-13 DMNH6012LK3Q-13 Hersteller : Diodes Incorporated DIOD_S_A0002497913_1-2541995.pdf MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 3240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.02 EUR
10+1.62 EUR
100+1.14 EUR
500+0.92 EUR
1000+0.85 EUR
2500+0.82 EUR
Mindestbestellmenge: 2
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DMNH6012LK3Q-13 DMNH6012LK3Q-13 Hersteller : Diodes Incorporated DMNH6012LK3Q.pdf Description: MOSFET N-CH 60V 80A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 364942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
11+1.66 EUR
100+1.17 EUR
500+0.99 EUR
1000+0.90 EUR
Mindestbestellmenge: 9
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DMNH6012LK3Q-13 Hersteller : DIODES INCORPORATED DMNH6012LK3Q.pdf DMNH6012LK3Q-13 SMD N channel transistors
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