| Anzahl | Preis |
|---|---|
| 1+ | 3.5 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.2 EUR |
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Technische Details DMNH6021SPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.2A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A, Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V, Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMNH6021SPDQ-13 nach Preis ab 1.63 EUR bis 3.75 EUR
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DMNH6021SPDQ-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 8.2A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 311 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMNH6021SPDQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 8.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.75 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.63 EUR |