| Anzahl | Preis |
|---|---|
| 1+ | 3.5 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.2 EUR |
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Technische Details DMNH6021SPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.2A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A, Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V, Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMNH6021SPDQ-13 nach Preis ab 1.63 EUR bis 3.75 EUR
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DMNH6021SPDQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 8.2A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 311 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH6021SPDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 8.2A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMNH6021SPDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W Mounting: SMD Polarisation: unipolar Gate charge: 20.1nC On-state resistance: 40mΩ Power dissipation: 2.8W Drain current: 6.5A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Case: PowerDI5060-8 Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |