DMNH6021SPDQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 8.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.04 EUR |
| 5000+ | 1.02 EUR |
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Technische Details DMNH6021SPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.2A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A, Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V, Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMNH6021SPDQ-13 nach Preis ab 1.09 EUR bis 3.22 EUR
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DMNH6021SPDQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 5939 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH6021SPDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 8.2A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17565 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMNH6021SPDQ-13 | Hersteller : DIODES INCORPORATED |
DMNH6021SPDQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |