DMNH6021SPDW-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 20.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerDI5060-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DMNH6021SPDW-13 DIODES INCORPORATED
Description: MOSFET 2N-CH 60V 8.2A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc), Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V, Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type R).
Weitere Produktangebote DMNH6021SPDW-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMNH6021SPDW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 8.2A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc) Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type R) |
Produkt ist nicht verfügbar |
||
| DMNH6021SPDW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W Mounting: SMD Drain-source voltage: 60V Drain current: 6.5A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 2.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 20.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |